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MS1453

Part Number MS1453
Manufacturer Advanced Power Technology
Description RF & MICROWAVE TRANSISTORS
Published Dec 26, 2016
Detailed Description RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS Features • 800-900 MHz • 24 VOLTS • COMMON EMITTER • GOL...
Datasheet MS1453




Overview
RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS Features • 800-900 MHz • 24 VOLTS • COMMON EMITTER • GOLD METALIZATION • INTERNAL INPUT MATCHING • CLASS AB LINEAR OPERATION • POUT = 30 W MIN.
WITH 7.
5 dB GAIN MS1453 DESCRIPTION: The MS1453 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCES VEBO IC PDISS TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature TSTG Storage Temperature Thermal Data RTH(J-C)...






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