OptiMOSTM3 Power-
Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on)max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; halogen free • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPP114N12N3 G
IPP114N12N3 G
120 V 11.
4 mΩ 75 A
Package Marking
PG-TO220-3 114N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current2)
ID I D,pulse
T C=25 °C T C=100 °C T C=25 °C
Avalanche energy, single pulse
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