|
Part Number
|
IXTH3N100P |
|
Manufacturer
|
IXYS |
|
Description
|
MOSFET |
|
Published
|
Dec 31, 2016 |
|
Detailed Description
|
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA3N100P IXTP3N100P IXTH3N100P
Symbol
VDSS VDGR
VGSS...
|
|
Datasheet
|
IXTH3N100P
|
Overview
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA3N100P IXTP3N100P IXTH3N100P
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
FMCd Weight
Test Conditions
TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M
Continuous Transient
Maximum Ratings 1000 1000
20 30
V V
V V
TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
3 6
3 200
10
125
-55 .
.
.
+150 150
-55 .
.
.
+150
A A
A mJ
V/ns
W
C C C
Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s
300 260
°C °C
Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247)
10.
.
65 / 2.
2.
.
14.
6 1.
13 / 10
N/lb Nm/lb.
in
TO...
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