DatasheetsPDF.com

A1SHB


Part Number A1SHB
Manufacturer Bruckewell
Title P-Channel Enhancement Mode Power MOSFET
Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This d...
Features
● VDS = -20V,ID = -2.6A RDS(ON) 160mΩ @ VGS=-2.5V RDS(ON) 120mΩ @ VGS=-4.5V D G S Schematic diagram
● High power and current handing capability
● Lead free product is acquired
● Surface mount package Marking and pin assignment Application
● PWM applications
● Load switch SC70-3/ SOT-323 top...

File Size 385.32KB
Datasheet A1SHB PDF File






Similar Datasheet

A1SHB : SHENZHEN YANGJING MICROELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2301 P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: A11 SHB SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t ≤5s) Junction Temperature Storage Temperature VDS VGS ID IDM IS PD R θJA TJ Tstg Value -20 ±8 -2.3 -10 -0.72 0.35 357 150 -55 ~+150 Unit V A W ℃/W ℃ YANGJING MICROELE.

A1SHB : The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -2.5A RDS(ON) 160mΩ @ VGS=-2.5V RDS(ON) 120mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D G S Schematic diagram A1SHB Marking and pin assignment Application ● PWM applications ● Load switch SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package A12SHB HM2301B SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolu.

A1SHB : VS2301BC-A -20V/-3A P-Channel Advanced Power MOSFET Features  P-Channel  Enhancement mode  Fast Switching  Pb-free lead plating; RoHS compliant; Halogen free V DS R DS(on),TYP @VGS=-4.5V R DS(on),TYP @VGS=-3.3V R DS(on),TYP @VGS=-2.5V ID -20 V 86 mΩ 94 mΩ 106 mΩ -3 A SOT23 Part ID V2301BC-A Package Type SOT23 Marking A1SHB Tape and reel information 3000pcs/reel Maximum ratings, at T A =25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=-4.5V IDM Pulse drain current tested ① PD Maximum power dissipation TSTG , TJ Storage and j.

A1SHB : SMD Type P-Channel Enhancement MOSFET SI2301 (KI2301) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) < 100mΩ (VGS =-4.5V) ● RDS(ON) < 150mΩ (VGS =-2.5V) G1 S2 3D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.10.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150℃)*1 Ta=25℃ Ta=70℃ Pulsed Drain Current *2 Power Dissipation *1 Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient *1 *3 Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)