Part Number
|
CJU05N60 |
Manufacturer
|
JCET |
Description
|
N-Channel Power MOSFET |
Published
|
Jan 3, 2017 |
Detailed Description
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L(4R) Plastic-Encapsulate MOSFETS
CJU05N60
V(BR)DSS
600V
N...
|
Datasheet
|
CJU05N60
|
Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-252-2L(4R) Plastic-Encapsulate MOSFETS
CJU05N60
V(BR)DSS
600V
N-CHANNEL POWER MOSFET
RDS(on)MAX
2.
5Ω@10V
ID
4.
5 A
TO-252-2L(4R)
DESCRIPTION This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently.
This new
high energy device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications
1.
GATE 2.
DRAIN 3.
SOURCE
1
such as power suplies, converters, power motor controls and bridge
circuits.
FEATURES
z Low RDS(on) z Lower Capacitances
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy...
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