Part Number
|
CJU18P10 |
Manufacturer
|
JCET |
Description
|
P-Channel Power MOSFET |
Published
|
Jan 3, 2017 |
Detailed Description
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU18P10 P-Channel Power MOSFE...
|
Datasheet
|
CJU18P10
|
Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU18P10 P-Channel Power MOSFET
V(BR)DSS
-100V
RDS(on)MAX
100mΩ@-10V
ID
-18A
TO-252-2L
GENERAL DESCRIPTION
The CJU18P10 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
It is ESD protested.
1.
GATE 2.
DRAIN
3.
SOURCE
FEATURE
VDS =-100V,ID =-18A RDS(on) 100mΩ @ VGS=-10V (Typ:85mΩ)
ESD Protection Advanced trench process technology Reliable and rugged High density cell design for ultra low On-Resistance
APPLICATION
Power management in notebook computer Portable equipment and battery pow...
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