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Part Number
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CJU30N10 |
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Manufacturer
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JCET |
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Description
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N-Channel Power MOSFET |
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Published
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Jan 3, 2017 |
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Detailed Description
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU30N10 N-Channel Power MOSF...
|
|
Datasheet
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CJU30N10
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Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU30N10 N-Channel Power MOSFET
V(BR)DSS
100V
RDS(on)MAX
31mΩ@10V
ID
30 A
DESCRIPTION
This advanced high voltage MOSFET is designed to stand high
energy in the avalanche mode and switch efficiently.
This new high
energy device also offers a drain-to-source diode fast recovery time.
TO-252-2L
1.
GATE 2.
DRAIN 3.
SOURCE
Desighed for high voltage, high speed switching applications such as
power supplies, converters, power motor controls and bridge circuits.
FEATURES
High density cell design for ultra low RDS(on)
Special process technology for high ESD capability
Fully characterized a...
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