NTE2147 Integrated Circuit 4K Static Random Access Memory (SRAM) Description: The NTE2147 is a 4096−bit static Random Access Memory (SRAM) in an 18−Lead DIP type package organized as 4096 words by 1−bit.
Using a scaled NMOS technology, it incorporates an innovative design approach which provides the ease−of−use features associated with non−clocked static memories and the reduced standby power dissipation associated with clocked static memories.
The result is low standby power dissipation without the need for clocks, address setup, and hold times.
In addition, data rates are not reduced due to cycle times that are longer than access times.
CS controls the power down feature.
In less than a cy...

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