Part Number
|
HY57V28820HCT |
Manufacturer
|
Hynix Semiconductor |
Description
|
4Banks x 4M x 8bits Synchronous DRAM |
Published
|
Jan 5, 2017 |
Detailed Description
|
HY57V28820HC(L)T
4Banks x 4M x 8bits Synchronous DRAM
0.1 : Hynix Change 0.2 : Burst read single write mode correction
...
|
Datasheet
|
HY57V28820HCT
|
Overview
HY57V28820HC(L)T
4Banks x 4M x 8bits Synchronous DRAM
0.
1 : Hynix Change 0.
2 : Burst read single write mode correction
Rev.
0.
2 / Aug.
2001
1
HY57V28820HC(L)T
4Banks x 4M x 8bits Synchronous DRAM
DESCRIPTION
The Hynix HY57V28820HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.
HY57V28820HC(L)T is organized as 4banks of 4,194,304x8.
HY57V28820HC(L)T is offering fully synchronous operation referenced to a positive edge of the clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve very high bandwidth.
All ...
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