Part Number
|
STGYA120M65DF2 |
Manufacturer
|
STMicroelectronics |
Description
|
IGBT |
Published
|
Jan 7, 2017 |
Detailed Description
|
STGYA120M65DF2
Datasheet
Trench gate field-stop, 650 V, 120 A, low-loss M series IGBT in a Max247 long leads package
TA...
|
Datasheet
|
STGYA120M65DF2
|
Overview
STGYA120M65DF2
Datasheet
Trench gate field-stop, 650 V, 120 A, low-loss M series IGBT in a Max247 long leads package
TAB
1 23 TAB
1 2 3
Max247 long leads
C(2, TAB)
G(1)
Features
• Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.
65 V (typ.
) @ IC = 120 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft- and fast-recovery antiparallel diode
Applications
• Motor control • UPS • PFC • General purpose inverter
Description
E(3)
NG1E3C2T
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure.
The device is part of t...
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