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BC848S

Part Number BC848S
Manufacturer JCET
Description DUAL TRANSISTOR
Published Jan 8, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC848S DUAL TRANSISTOR (NPN+...
Datasheet BC848S




Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-363 Plastic-Encapsulate Transistors BC848S DUAL TRANSISTOR (NPN+NPN) APPLICATION  This device is designed for general purpose amplifier applications SOT-363 Marking : 2C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEO Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous 100 PD Power Dissipation 200 RθJA Thermal Resistance from Junction to Ambient 625 Tj Junction Temperature 150 Tstg Storage Temperature Range -55~+150 Units V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter ...






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