JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
DFNWB2×2-6L-I Power Management
Transistors-MOSFET
CJMNT31
PNP Power
Transistor with N-MOSFET
V(BR)DSS/VR
20V -30V
RDS(on)MAX
360mΩ@4.
5V 410mΩ@2.
5V 480mΩ@1.
8V
1.
3Ω@1.
5V
/
ID/IC
0.
69A -2A
DFNWB2×2-6L-I
FEATURES z Ultra low collector-to-emitter saturation voltage z High DC current gain z Small package DFNWB2x2-6L-I
MARKING: 31
APPLICATIONS z Charging circuit z Other power management in portable equipments
Equivalent circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
PNP Transistor
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous(Note1) I...