Part Number
|
SiHB21N65EF |
Manufacturer
|
Vishay |
Description
|
Power MOSFET |
Published
|
Jan 8, 2017 |
Detailed Description
|
www.vishay.com
SiHB21N65EF
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ...
|
Datasheet
|
SiHB21N65EF
|
Overview
www.
vishay.
com
SiHB21N65EF
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max.
() at 25 °C Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration
700 VGS = 10 V
106 14 33 Single
0.
18
D
D2PAK (TO-263)
GD S
G
S N-Channel MOSFET
FEATURES
• Fast body diode MOSFET using E series technology
• Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912
APPLICATIONS
• Telecommunications - Server and telecom power sup...
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