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Part Number
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SiHB35N60E |
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Manufacturer
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Vishay |
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Description
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Power MOSFET |
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Published
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Jan 8, 2017 |
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Detailed Description
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www.vishay.com
SiHB35N60E
Vishay Siliconix
E Series Power MOSFET
D2PAK (TO-263)
D
GD S
G
S N-Channel MOSFET
PRODU...
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Datasheet
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SiHB35N60E
|
Overview
www.
vishay.
com
SiHB35N60E
Vishay Siliconix
E Series Power MOSFET
D2PAK (TO-263)
D
GD S
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) typ.
() at 25 °C Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
132 22 46 Single
0.
082
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
FEATURES
• A specific on resistance (m-cm2) reduction of 25 %
• Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance
please see www.
vishay.
com/doc?99912
APPLICATIONS • Power factor correction power supp...
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