Part Number
|
SiHB33N60E |
Manufacturer
|
Vishay |
Description
|
Power MOSFET |
Published
|
Jan 8, 2017 |
Detailed Description
|
www.vishay.com
SiHB33N60E
Vishay Siliconix
E Series Power MOSFET
D D2PAK (TO-263)
G
GD S
S N-Channel MOSFET
PRODU...
|
Datasheet
|
SiHB33N60E
|
Overview
www.
vishay.
com
SiHB33N60E
Vishay Siliconix
E Series Power MOSFET
D D2PAK (TO-263)
G
GD S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max.
() at 25 °C Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
150 24 42 Single
0.
099
ORDERING INFORMATION
Package Lead (Pb)-free
Lead (Pb)-free and Halogen-free
FEATURES
• Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses
• Ultra low gate charge (Qg) • Avalanche energy rated (UIS)
Available
• Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912
APPLICATIONS • Server and telecom power supplies • Switch mode power sup...
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