Part Number
|
FDMD82100 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
MOSFET |
Published
|
Jan 10, 2017 |
Detailed Description
|
FDMD82100 Dual N-Channel PowerTrench® MOSFET
June 2014
FDMD82100
Dual N-Channel Power Trench® MOSFET
100 V, 25 A, 19 m...
|
Datasheet
|
FDMD82100
|
Overview
FDMD82100 Dual N-Channel PowerTrench® MOSFET
June 2014
FDMD82100
Dual N-Channel Power Trench® MOSFET
100 V, 25 A, 19 mΩ
Features
General Description
Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.
5 A Ideal for flexible layout in primary side of bridge topology
Termination is Lead-free and RoHS Compliant 100% UIL tested Kelvin High Side MOSFET drive pin-out capability
This device includes two 100V N-Channel MOSFETs in a dual Power (3.
3 mm X 5 mm) package.
HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
Applications
Synchronous Buck : Primary Switch of Half / F...
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