Part Number
|
FDMD8280 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
MOSFET |
Published
|
Jan 10, 2017 |
Detailed Description
|
FDMD8280 Dual N-Channel PowerTrench® MOSFET
October 2014
FDMD8280
Dual N-Channel Power Trench® MOSFET
80 V, 40 A, 8.2 ...
|
Datasheet
|
FDMD8280
|
Overview
FDMD8280 Dual N-Channel PowerTrench® MOSFET
October 2014
FDMD8280
Dual N-Channel Power Trench® MOSFET
80 V, 40 A, 8.
2 mΩ
Features
General Description
Max rDS(on) = 8.
2 mΩ at VGS = 10 V, ID = 11 A Max rDS(on) = 11 mΩ at VGS = 8 V, ID = 9.
5 A Ideal for flexible layout in primary side of bridge topology
Termination is Lead-free and RoHS Compliant 100% UIL tested Kelvin High Side MOSFET drive pin-out capability
This device includes two 80V N-Channel MOSFETs in a dual Power (3.
3 mm X 5 mm) package.
HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
Applications
Synchronous Buck : Primary Switch of Half /...
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