MOSFET
FDMD84100 Dual N-Channel PowerTrench® MOSFET June 2016 FDMD84100 Dual N-Channel PowerTrench® MOSFET 100 V, 21 A, 20 mΩ Features General Description Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 32 mΩ at VGS = 6 V, ID = 5.5 A Ideal for flexible layout in secondary side synchronous rectification This package integrates two N-Channel dev...
Fairchild Semiconductor