FDMS8020 N-Channel PowerTrench® MOSFET FDMS8020 N-Channel PowerTrench® MOSFET 30 V, 131 A, 2.
5 mΩ Features „ Max rDS(on) = 2.
5 mΩ at VGS = 10 V, ID = 26 A „ Max rDS(on) = 3.
6 mΩ at VGS = 4.
5 V, ID = 21.
5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant May 2015 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low g...

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