FDMS86550 N-Channel PowerTrench® MOSFET March 2015 FDMS86550 N-Channel PowerTrench® MOSFET 60 V, 234 A, 1.
65 mΩ Features General Description „ Max rDS(on) = 1.
65 mΩ at VGS = 10 V, ID = 32 A „ Max rDS(on) = 2.
2 mΩ at VGS = 8 V, ID = 27 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
„ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant Applications „ Primary DC-DC MOSFET „ Secondary Synchronous Rectifier „ Load Switch Top Pin 1 ...

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