FDMC7572S N-Channel Power Trench® SyncFETTM
August 2011
FDMC7572S
N-Channel Power Trench® SyncFETTM
25 V, 40 A, 3.
15 mΩ
Features
General Description
Max rDS(on) = 3.
15 mΩ at VGS = 10 V, ID = 22.
5 A Max rDS(on) = 4.
7 mΩ at VGS = 4.
5 V, ID = 18 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFET
Schottky Body Diode
100% UIL Tested
RoHS Compliant
The FDMC7572S has been designed to minimize losses in power conversion application.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
This device has the added benefit of an efficient monolithic Scho...