FDMC86116LZ N-Channel Shielded Gate PowerTrench® MOSFET FDMC86116LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 7.
5 A, 103 mΩ November 2013 Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.
3 A „ Max rDS(on) = 153 mΩ at VGS = 4.
5 V, ID = 2.
7 A „ HBM ESD protection level 3 KV typical (Note 4) „ 100% UIL Tested „ RoHS Compliant This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ...

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