Part Number
|
FDMC86139P |
Manufacturer
|
Fairchild Semiconductor |
Description
|
MOSFET |
Published
|
Jan 10, 2017 |
Detailed Description
|
FDMC86139P P-Channel PowerTrench® MOSFET
FDMC86139P
P-Channel PowerTrench® MOSFET
-100 V, -15 A, 67 mΩ
June 2014
Feat...
|
Datasheet
|
FDMC86139P
|
Overview
FDMC86139P P-Channel PowerTrench® MOSFET
FDMC86139P
P-Channel PowerTrench® MOSFET
-100 V, -15 A, 67 mΩ
June 2014
Features
General Description
Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.
4 A Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.
6 A Very low RDS-on mid voltage P channel silicon technology
optimised for low Qg
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology.
This
very high density process is especially tailored to minimize
on-state resistance and optimized for superior switching
performance.
This product is optimised for fast switching applications as well as load switch applications
100% UIL Tested RoHS Compliant
Appl...
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