FDMC612PZ P-Channel PowerTrench® MOSFET FDMC612PZ P-Channel PowerTrench® MOSFET -20 V, -14 A, 8.
4 mΩ October 2013 Features General Description „ Max rDS(on) = 8.
4 mΩ at VGS = -4.
5 V, ID = -14 A „ Max rDS(on) = 13 mΩ at VGS = -2.
5 V, ID = -11 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Termination is Lead-free and RoHS Compliant „ HBM ESD capability level 3.
6 KV typical (Note 4) This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Applications „ Battery Management...

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