Part Number
|
FDMC6688P |
Manufacturer
|
Fairchild Semiconductor |
Description
|
MOSFET |
Published
|
Jan 10, 2017 |
Detailed Description
|
FDMC6688P P-Channel PowerTrench® MOSFET
February 2015
FDMC6688P
P-Channel PowerTrench® MOSFET
-20 V, -56 A, 6.5 mΩ
...
|
Datasheet
|
FDMC6688P
|
Overview
FDMC6688P P-Channel PowerTrench® MOSFET
February 2015
FDMC6688P
P-Channel PowerTrench® MOSFET
-20 V, -56 A, 6.
5 mΩ
Features
General Description
Max rDS(on) = 6.
5 mΩ at VGS = -4.
5 V, ID = -14 A Max rDS(on) = 9.
8 mΩ at VGS = -2.
5 V, ID = -11 A Max rDS(on) = 20 mΩ at VGS = -1.
8 V, ID = -9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
Lead-free and RoHS Compliant
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Applications
Load Switch Battery Management ...
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