Part Number
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FDMC4435BZ |
Manufacturer
|
Fairchild Semiconductor |
Description
|
MOSFET |
Published
|
Jan 10, 2017 |
Detailed Description
|
FDMC4435BZ P-Channel Power Trench® MOSFET
FDMC4435BZ
P-Channel Power Trench® MOSFET
-30 V, -18 A, 20 mΩ
November 2015
...
|
Datasheet
|
FDMC4435BZ
|
Overview
FDMC4435BZ P-Channel Power Trench® MOSFET
FDMC4435BZ
P-Channel Power Trench® MOSFET
-30 V, -18 A, 20 mΩ
November 2015
Features
General Description
Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -8.
5 A Max rDS(on) = 37 mΩ at VGS = -4.
5 V, ID = -6.
3 A Extended VGSS range (-25 V) for battery applications High performance trench technology for extremely low rDS(on) High power and current handling capability
HBM ESD protection level 7 kV typical (Note 4)
100% UIL Tested
Termination is Lead-free and RoHS Compliant
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.
T...
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