FDMC86261P P-Channel PowerTrench® MOSFET June 2014 FDMC86261P P-Channel PowerTrench® MOSFET -150 V, -9 A, 160 mΩ Features „ Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.
4 A „ Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.
2 A „ Very low RDS-on mid voltage P channel silicon technology optimised for low Qg „ This product is optimised for fast switching applications as well as load switch applications „ 100% UIL Tested „ RoHS Compliant General Description This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology.
This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.
Applic...

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