FDMC8321LDC N-Channel PowerTrench® MOSFET December 2014 FDMC8321LDC N-Channel Power Trench® MOSFET 40 V, 108 A, 2.
5 mΩ Features „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 2.
5 mΩ at VGS = 10 V, ID = 27 A „ Max rDS(on) = 4.
1 mΩ at VGS = 4.
5 V, ID = 21 A „ High performance technology for extremely low rDS(on) „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Applications „ ...

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