FDMS86350ET80 N-Channel PowerTrench® MOSFET January 2015 FDMS86350ET80 N-Channel PowerTrench® MOSFET 80 V, 198 A, 2.
4 mΩ Features General Description „ Extended TJ rating to 175°C „ Max rDS(on) = 2.
4 mΩ at VGS = 10 V, ID = 25 A „ Max rDS(on) = 3.
2 mΩ at VGS = 8 V, ID = 22 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications „ Primary MOSFET „ Synchronous Rectifier „ Load...

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