Part Number
|
FDMS86150ET100 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
MOSFET |
Published
|
Jan 10, 2017 |
Detailed Description
|
FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET
FDMS86150ET100
N-Channel Shielded Gate PowerTrench® MOSFET
1...
|
Datasheet
|
FDMS86150ET100
|
Overview
FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET
FDMS86150ET100
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 128 A, 4.
85 mΩ
January 2015
Features
Extended TJ rating to 175°C Shielded Gate MOSFET Technology
Max rDS(on) = 4.
85 mΩ at VGS = 10 V, ID = 16 A Max rDS(on) = 7.
8 mΩ at VGS = 6 V, ID = 13 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet ma...
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