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Part Number
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FDME820NZT |
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Manufacturer
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Fairchild Semiconductor |
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Description
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MOSFET |
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Published
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Jan 10, 2017 |
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Detailed Description
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FDME820NZT N-Channel PowerTrench® MOSFET
October 2013
FDME820NZT
N-Channel PowerTrench® MOSFET
20 V, 9 A, 18 mΩ
Featu...
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Datasheet
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FDME820NZT
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Overview
FDME820NZT N-Channel PowerTrench® MOSFET
October 2013
FDME820NZT
N-Channel PowerTrench® MOSFET
20 V, 9 A, 18 mΩ
Features
Max rDS(on) = 18 mΩ at VGS = 4.
5 V, ID = 9 A Max rDS(on) = 24 mΩ at VGS = 2.
5 V, ID = 7.
5 A Max rDS(on) = 32 mΩ at VGS = 1.
8 V, ID = 7 A Low profile: 0.
55 mm maximum in the new package
MicroFET 1.
6x1.
6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level 2.
5 kV (Note3)
RoHS Compliant
General Description
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.
8 V on special MicroFET leadframe.
Applications
Li-lon Battery Pack Baseband Sw...
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