FDMA86265P P-Channel PowerTrench® MOSFET August 2018 FDMA86265P P-Channel PowerTrench® MOSFET -150 V, -1 A, 1.
2 Ω Features „ Max rDS(on) = 1.
2 Ω at VGS = -10 V, ID = -1 A „ Max rDS(on) = 1.
4 Ω at VGS = -6 V, ID = -0.
9 A „ Low Profile - 0.
8 mm maximum in the new package MicroFET 2x2 mm „ Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg „ This product is optimised for fast switching applications as well as load switch applications „ 100% UIL tested „ RoHS Compliant General Description This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switc...

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