FDMA908PZ Single P-Channel PowerTrench® MOSFET FDMA908PZ Single P-Channel PowerTrench® MOSFET February 2014 -12 V, -12 A, 12.
5 mΩ Features „ Max rDS(on) = 12.
5 mΩ at VGS = -4.
5 V, ID = -12 A „ Max rDS(on) = 18 mΩ at VGS = -2.
5 V, ID = -10 A „ Max rDS(on) = 28 mΩ at VGS = -1.
8 V, ID = -8 A „ Low Profile - 0.
8 mm maximum in the new package MicroFET 2x2 mm „ HBM ESD protection level 2.
8 kV typical (Note 3) „ Free from halogenated compounds and antimony oxides „ RoHS Compliant General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance and zener dio...

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