Part Number
|
FDME910PZT |
Manufacturer
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Fairchild Semiconductor |
Description
|
MOSFET |
Published
|
Jan 10, 2017 |
Detailed Description
|
FDME910PZT P-Channel PowerTrench® MOSFET
FDME910PZT
P-Channel PowerTrench® MOSFET
-20 V, -8 A, 24 mΩ
Features
Max rDS...
|
Datasheet
|
FDME910PZT
|
Overview
FDME910PZT P-Channel PowerTrench® MOSFET
FDME910PZT
P-Channel PowerTrench® MOSFET
-20 V, -8 A, 24 mΩ
Features
Max rDS(on) = 24 mΩ at VGS = -4.
5 V, ID = -8 A Max rDS(on) = 31 mΩ at VGS = -2.
5 V, ID = -7 A Max rDS(on) = 45 mΩ at VGS = -1.
8 V, ID = -6 A Low profile: 0.
55 mm maximum in the new package MicroFET
1.
6x1.
6 Thin
HBM ESD protection level 2 kV typical (Note 3)
Free from halogenated compounds and antimony oxides
RoHS Compliant
February 2015
General Description
This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance and zener diode protection ag...
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