FDMA3027PZ Dual P-Channel PowerTrench® MOSFET FDMA3027PZ Dual P-Channel PowerTrench® MOSFET -30 V, -3.
3 A, 87 mΩ July 2014 Features General Description „ Max rDS(on) = 87 mΩ at VGS = -10 V, ID = -3.
3 A „ Max rDS(on) = 152 mΩ at VGS = -4.
5 V, ID = -2.
3 A „ HBM ESD protection level 2 KV typical (Note 3) „ Low profile - 0.
8 mm maximum - in the new package MicroFET 2x2 mm „ RoHS Compliant This device is designed specifically as a single package solution for dual switching requirements such as gate driver for larger Mosfets.
It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal performa...

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