FDS9934C
March 2006
FDS9934C
Complementary
These dual N- and P-Channel enhancement mode power field effect
transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
• Q1: 6.
5 A, 20 V.
RDS(ON) = 30 mΩ @ VGS = 4.
5 V RDS(ON) = 43 mΩ @ VGS = 2.
5 V.
• Q2: –5 A, –20 V, RDS(ON) = 55 mΩ @ VGS = –4.
5 V RDS(ON) = 90 mΩ @ VGS = –2.
5 V
DD2 DD2 DD1 DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Q2
5
6
Q1
7
8
4 ...