Part Number
|
FDT86113LZ |
Manufacturer
|
Fairchild Semiconductor |
Description
|
MOSFET |
Published
|
Jan 11, 2017 |
Detailed Description
|
FDT86113LZ N-Channel PowerTrench® MOSFET
March 2011
FDT86113LZ
N-Channel PowerTrench® MOSFET
100 V, 3.3 A, 100 m:
Fea...
|
Datasheet
|
FDT86113LZ
|
Overview
FDT86113LZ N-Channel PowerTrench® MOSFET
March 2011
FDT86113LZ
N-Channel PowerTrench® MOSFET
100 V, 3.
3 A, 100 m:
Features
General Description
Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.
3 A Max rDS(on) = 145 m: at VGS = 4.
5 V, ID = 2.
7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
HBM ESD protection level 3 KV typical (Note 4)
100% UIL tested
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance.
G-S zener...
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