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Part Number
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FDC637BNZ |
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Manufacturer
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Fairchild Semiconductor |
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Description
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MOSFET |
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Published
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Jan 11, 2017 |
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Detailed Description
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FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET
FDC637BNZ
N-Channel 2.5V Specified PowerTrench® MOSFET
20V, 6.2...
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Datasheet
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FDC637BNZ
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Overview
FDC637BNZ N-Channel 2.
5V Specified PowerTrench® MOSFET
FDC637BNZ
N-Channel 2.
5V Specified PowerTrench® MOSFET
20V, 6.
2A, 24mΩ
Features
General Description
September 2007
tm
Max rDS(on) = 24mΩ at VGS = 4.
5V, ID = 6.
2A Max rDS(on) = 32mΩ at VGS = 2.
5V, ID = 5.
2A Fast switching speed Low gate charge (8nC typical) High performance trench technology for extremely low rDS(on) SuperSOT™–6 package: small footprint (72% smaller than
standard SO-8; low profile (1mm thick) HBM ESD protection level 2kV typical (Note 3) Manufactured using green packaging material Halide-Free RoHS Compliant
This N-Channel 2.
5V specified MOSFET is produced using Fairchild Semiconductor’s advanc...
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