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FDN86501LZ

MOSFET

Description

FDN86501LZ N-Channel Shielded Gate PowerTrench® MOSFET October 2015 FDN86501LZ N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 2.6 A, 116 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A „ Max rDS(on) = 173 mΩ at VGS = 4.5 V, ID = 2.1 A „ High performance trench technology for extreme...


Fairchild Semiconductor

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