|
Part Number
|
FDD5353 |
|
Manufacturer
|
Fairchild Semiconductor |
|
Description
|
MOSFET |
|
Published
|
Jan 11, 2017 |
|
Detailed Description
|
FDD5353 N-Channel Power Trench® MOSFET
April 2015
FDD5353
N-Channel Power Trench® MOSFET
60V, 50A, 12.3m
Features
G...
|
|
Datasheet
|
FDD5353
|
Overview
FDD5353 N-Channel Power Trench® MOSFET
April 2015
FDD5353
N-Channel Power Trench® MOSFET
60V, 50A, 12.
3m
Features
General Description
Max rDS(on) = 12.
3m at VGS = 10V, ID = 10.
7A Max rDS(on) = 15.
4m at VGS = 4.
5V, ID = 9.
5A 100% UIL Tested
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
RoHS Compliant
Application
Inverter
Synchronous rectifier
Primary switch
G S
D
DT O-P-2A5K2 (T O -25 2)
D
G S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
...
Similar Datasheet