FDP10N50F / FDPF10N50FT N-Channel MOSFET
FDP10N50F / FDPF10N50FT
N-Channel MOSFET
500V, 9A, 0.
85Ω
Features
• RDS(on) = 0.
71Ω ( Typ.
) @ VGS = 10V, ID = 4.
5A • Low Gate Charge ( Typ.
18nC) • Low Crss ( Typ.
10pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant
January 2009
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited ...