FDMS8570S N-Channel PowerTrench® SyncFETTM
FDMS8570S
N-Channel PowerTrench® SyncFETTM
November 2014
25 V, 60 A, 2.
8 mΩ
Features
Max rDS(on) = 2.
8 mΩ at VGS = 10 V, ID = 24 A Max rDS(on) = 3.
1 mΩ at VGS = 4.
5 V, ID = 22 A High performance technology for extremely low rDS(on) SyncFETTM
Schottky Body Diode RoHS Compliant
General Description
This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-toAmbient thermal resistance.
This device has the added benefit of a...