FDMS0310S N-Channel PowerTrench® SyncFETTM
FDMS0310S
N-Channel PowerTrench® SyncFETTM
30 V, 42 A, 4 mΩ
Features
General Description
January 2015
Max rDS(on) = 4.
0 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.
2 mΩ at VGS = 4.
5 V, ID = 14 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency SyncFETTM
Schottky Body Diode
MSL1 robust package design
The FDMS0310S has been designed to minimize losses in power conversion application.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
This device has the added benefit of an efficient monolithic
Schottky body...