Part Number
|
FDMS3610S |
Manufacturer
|
Fairchild Semiconductor |
Description
|
MOSFET |
Published
|
Jan 11, 2017 |
Detailed Description
|
FDMS3610S PowerTrench® Power Stage
December 2011
FDMS3610S
PowerTrench® Power Stage
25V Asymmetric Dual N-Channel MOS...
|
Datasheet
|
FDMS3610S
|
Overview
FDMS3610S PowerTrench® Power Stage
December 2011
FDMS3610S
PowerTrench® Power Stage
25V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rDS(on) = 5.
0 mΩ at VGS = 10 V, ID = 17.
5 A Max rDS(on) = 5.
7 mΩ at VGS = 4.
5 V, ID = 16 A
Q2: N-Channel Max rDS(on) = 1.
8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.
2 mΩ at VGS = 4.
5 V, ID = 27 A Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been intern...
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