FDMS3622S PowerTrench® Power Stage December 2011 FDMS3622S PowerTrench® Power Stage 25V Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 5.
0 mΩ at VGS = 10 V, ID = 17.
5 A „ Max rDS(on) = 5.
7 mΩ at VGS = 4.
5 V, ID = 16 A Q2: N-Channel „ Max rDS(on) = 1.
4 mΩ at VGS = 10 V, ID = 34 A „ Max rDS(on) = 1.
6 mΩ at VGS = 4.
5 V, ID = 32 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been intern...

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