MOSFET
FDMS3686S PowerTrench® Power Stage FDMS3686S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 23 A Max rDS(on) = 3.8 mΩ at VGS = 4.5 V, ID = 21 A Low inductance packaging s...
Fairchild Semiconductor