FDD7N20 / FDU7N20 200V N-Channel MOSFET
FDD7N20 / FDU7N20
N-Channel MOSFET
200V, 5A, 0.
69Ω
Features
• RDS(on) = 0.
58Ω ( Typ.
) @ VGS = 10V, ID = 2.
5A • Low gate charge( Typ.
5nC ) • Low Crss ( Typ.
5pF ) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant
April 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for ...