SUN12A65F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=0.
68Ω (Typ.
)  Low gate charge: Qg=38nC (Typ.
)  Low reverse transfer capacitance: Crss=14.
5pF (Typ.
)  Lower EMI noise  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package GDS TO-220F-3L SUN12A65F SUN12A65 TO-220F-3L Marking Information AAUUKK ◎S△UYNΔM12YDADM6□D5D SDB20D45 Column 1: Manufacturer Column 2: Production Information e.
g.
) ◎△YMDD□ -.
◎: Option Code -.
△: Factory Management Code -.
YMDD: Date Code (Year, Month, Daily) -.
□: Package Option Code Column 3: Device Code Absolute maximum ratings (TC=25C...

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