FCD850N80Z / FCU850N80Z — N-Channel SuperFET® II MOSFET October 2014 FCD850N80Z / FCU850N80Z N-Channel SuperFET® II MOSFET 800 V, 6 A, 850 m Features • Typ.
RDS(on) = 710 mTyp.
) • Ultra Low Gate Charge (Typ.
Qg = 22 nC) • Low Eoss (Typ.
2.
3 uJ @ 400V) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 106 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
This technology is tailored to minimize conduction loss, provide su...

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