SMN04L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features  Drain-Source breakdown voltage: BVDSS=200V (Min.
)  Low gate charge: Qg=4nC (Typ.
)  Low drain-source On-Resistance: RDS(on)=1.
35Ω (Max.
)  100% avalanche tested  RoHS compliant device Ordering Information Part Number Marking Package SMN04L20D SMN04L20 TO-252 D G S TO-252 Marking Information SMN 04L20 YWW Column 1, 2: Device Code Column 3: Production Information e.
g.
) YWW -.
YWW: Date Code (year, week) Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Avalanche current (Note 2) S...

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